Superjunction MOSFETS - Advances Of Extreme Performance in MOSFETs

In the power semiconductor technology world, there was the same event. In principal, breakdown voltage of MOSFET is dominated by carrier concentration of Silicon material and it is directly related to on-resistance of the device. Therefore power device performance is theoretically predicted - it is the so called "Silicon Limit". However "Superjunction" technology broke the "Silicon Limit" and achieved high voltage and low on-resistance, side by side.