MOSFET R&D Modeling and Corporate Headquarters in Tempe Arizona (USA), MOSFET R&D and Design Center in Tokyo Japan, Starting Wafer & Substrate Manufacturing in Belfast Northern Ireland.

Over 50% of the 98 worldwide employees have an engineering degree.

Owner of over 80 granted patents, 6 pending, and 14 filed or disclosed.

• SOI/SiSi Wafers

• Advanced Engineered MEMS Substrates

• Superjunction MOSFETS

Superjunction MOSFET Design -

• Less Processing
• Lower Cost
• High UIS Capability

Since Silicon became the major material for semiconductor devices in 1960's, many researchers have been investigating the limit of Silicon semiconductor performance. In fact, they have created several innovative materials which may potentially exceed Silicon performance, such as various compound semiconductor materials.

Nevertheless Silicon has kept the position as leader of the semiconductor technologies all that long while for the reasons of easiness of manufacturing, high reliability, low cost and continuous innovation.

In the power semiconductor technology world, there was the same event. In principal, breakdown voltage of MOSFET is dominated by carrier concentration of Silicon material and it is directly related to on-resistance of the device. Therefore power device performance is theoretically predicted - it is the so called "Silicon Limit". However "Superjunction" technology broke the "Silicon Limit" and achieved high voltage and low on-resistance, side by side.

IceMOS MEMS MOSFET is the high voltage MOSFET of "Superjunction Technology". By the combination of Silicon MOSFET technology and MEMS process technology, IceMOS provides world-best-in-class performance. Well-known MEMS technology has been developed by unique manufacturing processes in contrast to MOSFET technology which continues progress mainly for smaller dimension. The combination of both technologies encourages advances in extreme performance of MOSFET.

A variety of voltages and packages for suitable applications:

• 600V

• 650V

• 700V

• 730V

• TO220 (Non-Isolated)

• TO220 Fullpak (Isolated)

• TO247

• D2PAK / TO263

• DPAK / TO252

• I2PAK / TO262

• IPAK / TO251

VJ....32 Lead-Bearing Finish MLCCs

• AEC-Q200 qualified with PPAP available

• IATF 16949 & MIL-STD-790 certified factory

• Available in 0402 to 1210 body size

• Tin / lead termination finish (≥4% Pb)

• Wet build process

• Noble Metal Electrode (NME) system

• Low On-Resistance

• Ultra Low Gate Charge

• High dv/dt Capability

• High Unclamped Inductive Switching (UIS) capability

• High peak current capability

• Increased transconductance performance